SD1020CS_05 Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – SCHOTTKY BARRIER RECTIFIERS

DATA SHEET
SD1020CS~SD10150CS
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE 20 to 150 Volts CURRENT 10.0 Amperes ^{TO-252 / DPAK}
FEATURES
• Plastic package has Underwriters Laboratory Flammability Classification 94V-O
• For surface mounted applications
• Low profile package
• Built-in strain relief
• Low power loss, High efficiency
• High surge capacity
• For use in low voltage high frequency inverters, free wheeling, and
polarity protection applications
• Pb free product are available : 99% Sn above can meet Rohs environment
substance diective request
.264(6.7)
.248(6.3)
.216(5.5)
.200(5.1)
.106(2.7)
.090(2.3)
MECHANICAL DATA
Case: TO-252 molded plastic
Terminals: Solder plated, solderable per MIL-STD-202G,Method 208
Polarity: As marking
Weight: 0.015 ounces, 0.4grams.
.09 .09
(2.3) (2.3)
.032(0.8)
.012(0.3)
Unit : inch (mm)
.098(2.5)
.082(2.1)
.024(0.6)
.016(0.4)
.02(0.5)
.071(1.8)
.051(1.3)
C
MAXIMUM RATINGS AND DELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
SYMBOL SD1020CS SD1030CS SD1040CS SD1050CS SD1060CS SD1080CS SD10100CS SD10150CS UNITS
Maximum Recurrent Peak Reverse Voltage
V RRM
20
30
40
50
60
80
100
150
V
Maximum RMS Voltage
V RMS
14
21
28
35
42
56
70
105
V
Maximum DC Blocking Voltage
VDC
20
30
40
Maximum Average Forward Rectified Current
.375" (9.5mm) lead length at Tc=100^OC
IAV
Peak Forward Surge Current : 8.3ms single half sine-
wave superimposed on rated load(JEDEC method)
IFSM
Maximum Instantaneous Forward Voltage at 5.0A per
leg
VF
0.55
Maximum DC Reverse Current TA=25^OC
at Rated DC Blocking Voltage TA=100^OC
IR
Maximum Thermal Resistance
RθJC
RθJA
Operati ng Juncti on Temperature Range
TJ
50
60
10.0
100
0.75
0.2
20
3.0
80
-50 to +125
80
100
0.85
150
V
A
A
0.92
V
mA
O_{C / W}
O_C
Storage Temperature Range
TSTG
-50 to +150
O_C
NOTES:
1. Both Bonding and Chip structure are available.
REV.0-MAR.19.2005
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