SBT2080XCT Datasheet, PDF (1/4 Pages) Pan Jit International Inc. – EXTREME LOW VF SCHOTTKY RECTIFIER

PSBT2080XCT~SBT2080XCB
EXTREME LOW VF SCHOTTKY RECTIFIER
Voltage
80 V
Current
20 A
Features
 Ultra low forward voltage, Low Power loss
 Surface mount package
 Ultra thin profile package for space constrained utilization
 Lead free in compliance with EU RoHS2.0 (2011/65/EU &
2015/865/EU directive)
 Green molding compound as per IEC61249 Std. . (Halogen Free)
TO-220AB
ITO-220AB
Mechanical Data
 Case: Molded plastic, TO-220AB, ITO-220AB, TO-263
 Terminals: solder plated, solderable per MIL-STD-750,Method 2026
 TO-220AB Weight: 0.067 ounces, 1.89 grams.
 ITO-220AB Weight: 0.056 ounces, 1.6 grams
 TO-263 Weight: 0.051 ounces, 1.46 grams
Maximum
Ratings
o
(T_A=25 C
unless
otherwise
noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum rms voltage
Maximum dc blocking voltage
Maximum average forward rectified
per device
current
per diode
Peak forward surge current : 8.3ms single half sine-
wave Superimposed on rated load per diode
Typical junction capacitance (V_R=4V, f=1MHz)
Typical thermal resistance per diode
TO-220AB
TO-263
(Note 1)
ITO-220AB
Operating junction temperature range
Storage temperature range
Electrical Characteristics
SYMBOL
V_RRM
V_RMS
V_R
I_F(AV)
I_FSM
C_J
R_θJC
T_J
T_STG
TO-263
VALUE
80
56
80
20
10
150
580
2
2
7
-55 to +150
-55 to +150
UNIT
V
V
V
A
A
pF
o_C/W
o_C
o_C
PARAMETER
SYMBOL
TEST CONDITION
Forward voltage per diode
Reverse current per diode (Note 2)
I_F = 1A
I_F = 3A
V_F
I_F = 10A
I_F = 1A
I_F = 3A
V_R = 64V
I_R
V_R = 80V
Note : 1. Mounted on infinite heatsink.
2. Short duration pulse test used to minimize self-heating effect.
T_J =25 ^oC
T_J =125 ^oC
T_J=25^oC
T_J =125 ^oC
TYP.
0.38
0.45
-
0.27
0.37
6
-
7
MAX.
-
-
0.63
-
-
-
40
-
UNIT
V
V
A
A
mA
January 9,2017-REV.00
Page 1