SBM3060VFCT Datasheet, PDF (1/4 Pages) Pan Jit International Inc. – Ultra low forward voltage drop, low power loss

SBM3060VFCT
ULTRA LOW VF SCHOTTKY RECTIFIER
VOLTAGE
60 Volt CURRENT 30 Ampere
FEATURES
• Ultra low forward voltage drop, low power loss
• High efficiency operation
• Lead free in compliance with EU RoHS 2011/65/EU directive
MECHANICAL DATA
Case : ITO-220AB, Plastic
Terminals : Solderable per MIL-STD-750, Method 2026
Weight : 0.056 ounces, 1.6 grams.
0.406(10.3)
0.381(9.7)
0.134(3.4)
0 . 11 8 ( 3 . 0 )
0.189(4.8)
0.165(4.2)
0.130(3.3)
0 . 11 4 ( 2 . 9 )
0.055(1.4)
0.039(1.0)
0.055(1.4)
0.039(1.0)
0.028(0.7)
0.019(0.5)
0.100(2.55)
0.100(2.55)
0 . 11 4 ( 2 . 9 )
0.098(2.5)
0.027(0.67)
0.022(0.57)
MAXIMUM RATINGS(TA=25^oC unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum rms voltage
Maximum dc blocking voltage
Maximum average forward rectified current
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load
Typical junction capacitance (VR=4V, f=1MHz)
Typical thermal resistance per diode
Operating junction temperature range
Storage temperature range
per diode
per device
per diode
(Note 1)
SYMBOL
VRRM
VRMS
VR
I F(AV)
I FSM
CJ
RJC
TJ
TSTG
VALUE
60
42
60
15
30
250
650
5.5
-55 to + 150
-55 to + 150
UNIT
V
V
V
A
A
pF
o_C/W
o_C
o_C
Note : 1. Device mounted on a infinite heatsink , then measured the center of the marking side.
ELECTRICAL CHARACTERISTICS(TA=25^oC unless otherwise noted)
PARAMETER
Breakdown voltage per diode
Instantaneous forward voltage per diode
Reverse current per diode
SYMBOL TEST CONDITIONS
VBR I R=0.5mA
I F=3A
I F=5A
VF
I F=15A
I F=3A
I F=5A
TJ=25^oC
TJ=125^oC
VR=42V
IR
VR=60V
TJ=25^oC
TJ=125^oC
May 13,2014-REV.00
MIN.
60
-
-
-
-
-
-
-
-
TYP.
-
0.36
0.40
0.55
0.29
0.35
30
-
16
MAX.
-
-
-
0.59
-
-
-
220
-
UNIT
V
V
V
A
A
mA
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