SB820_04 Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – SCHOTTKY BARRIER RECTIFIERS

DATA SHEET
SB820~SB8100
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE 20 to 100 Volts CURRENT ^{8 Ampere}
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• Pb free product are available : 99% Sn above can meet Rohs environment
substance directive request
TO-220AC
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
MECHANICAL DATA
Case: TO-220AC full molded plastic package
Terminals: Lead solderable per MIL-STD-202G, Method 208
Polarity: As marked.
Mounting Position: Any
Weight: 0.08 ounces, 2.24grams.
.038(0.96)
.019(0.50)
.1(2.54)
.1(2.54)
.025(0.65)MAX
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PAR AM ETER
M axim um R ecurrent P eak R everse V oltage
S Y M B O L S B 820 S B 830 S B 840 S B 850 S B 860 S B 880 S B 8100 U N IT S
V RRM
20
30
40
50
60
80
100
V
M axim um R M S V oltage
VRM S
14
21
28
35
42
56
70
V
M axim um D C B locking V oltage
VDC
M axim um A verage F orw ard C urrent .375"(9.5m m )
lead length at Tc =100^O C
IA V
P eak F orw ard S urge C urrent :8.3m s single half sine-
w ave superim posed on rated load(JE D E C m ethod)
IF S M
M axim um F orw ard V oltage at 8.0A
VF
M axim um D C R everse C urrent TA =25^O C
at R ated D C B locking V oltage TA =100^O C
IR
Typical Therm al R esistance
R θJC
20
30
40
0 .5 5
50
60
8
150
0 .7 5
0 .5
50
6
80
100
V
A
A
0 .8 5
V
mA
O_{C /W}
O perating Junction Tem perature R ang
TJ
-50 to +125
O_C
S torage Tem perature R ang
TJ,TS TG
-50 to +150
O_C
NOTES:
Both Bonding and Chip structure are available.
STAD-JUN.25.2004
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