SB820F Datasheet, PDF (1/2 Pages) Transys Electronics – ISOLATION SCHOTTKY BARRIER RECTIFIERS

SB820F SERIES
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
VOLTAGE 20 to 60 Volts CURRENT 8 Amperes
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forward voltage, high current capability
• High surge capacity.
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: ITO-220AC full molded plastic package
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Mounting Position: Any
• Weight: 0.0655 ounces, 1.859 grams.
0.406(10.3)
0.381(9.7)
0.134(3.4)
0.118(3.0)
0.055(1.4)
0.039(1.0)
0.055(1.4)
0.039(1.0)
0.028(0.7)
0.019(0.5)
0.100(2.55)
0.100(2.55)
0.189(4.8)
0.165(4.2)
0.130(3.3)
0 . 11 4 ( 2 . 9 )
0 . 11 4 ( 2 . 9 )
0.098(2.5)
0.027(0.67)
0.022(0.57)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
S YMB OL S B 8 2 0 F S B 8 3 0 F S B 84 0 F S B 8 4 5 F S B 8 5 0 F S B 8 6 0 F UNITS
Maximum Recurrent Peak Reverse Voltage
V _RRM
20
30
40
45
50
60
V
Maximum RMS Voltage
V _RMS
14
21
28
31.5
35
42
V
Maximum DC Blocking Voltage
V
20
30
40
45
50
60
V
DC
Maximum Average Forward Current at
Tc =75^OC
I_{F (AV )}
8
A
Peak Forward Surge Current : 8.3 ms single
half sine-wave superimposed on rated load
I_{F S M}
150
A
(JEDEC method)
Maximum Forward Voltage at 8.0A
V_F
0.55
0.75
V
Maximum DC Reverse Current
at Rated DC Blocking Voltage
T_J=2 5 ^OC
T_J= 1 0 0 ^OC
I_R
0.2
50
mA
Typ i ca l The rmal Re si sta nce
R_JC
3
O_{C / W}
Op e r a t i ng J unc t i o n Te m p e ra t ure Ra ng e
TJ
-55 to +125
-55 to +150
O_C
S t o ra g e Te m p e ra t ur e Ra ng e
TSTG
-55 to +150
O_C
NOTE:
Both Bonding and Chip structure are available.
August 23,2010-REV.03
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