SB820D_05 Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – D2PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER

DATA SHEET
SB820D~SB8150D
D²PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER
VOLTAGE 20 to 150 Volts CURRENT ^{8 Ampere TO-263 / D2PAK}
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• Both normal and Pb free product are available :
Normal : 80~95% Sn, 5~20% Pb
Pb free: 99% Sn above
.409(10.4)
.387(9.80)
.236(6.0)
.197(5.0)
MECHANICAL DATA
Case: TO-263/D²PAK molded plastic package
Terminals: Lead solderable per MIL-STD-202G, Method 208
Polarity: As marked.
Mounting Position: Any
Weight: 0.06 ounces, 1.7 grams.
.055(1.4)
.039(1.0)
.108(2.75)
.092(2.35)
.035(0.9)MAX
.108(2.75)
.092(2.35)
Unit: inch (mm)
.189(4.8)
.137(4.4)
.055(1.4)
.047(1.2)
.026(0.7)
.011(0.3)
blank
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current .375"(9.5mm)
lead length at Tc =100^OC
Peak Forward Surge Current :8.3ms single half sine-
wave superimposed on rated load(JEDEC method)
Maximum Forward Voltage at 8.0A
Maxi mum D C Reverse C urrent TA =25^OC
at Rated D C B locki ng Voltage TA =100^OC
Typi cal Thermal Resi stance
Operati ng Juncti on Temperature Rang
S torage Temperature Rang
SYMBOL SB820D SB830D SB840D SB850D SB860D SB880D SB8100D SB8150D UNITS
V RRM
20
30
40
50
60
80
100
150
V
V RMS
14
21
28
35
42
56
70
105
V
VDC
20
30
40
50
60
80
100
150
V
IAV
8
A
IFSM
150
A
VF
0.55
IR
RθJC
0.75
0.5
50
6
0.85
0.92
V
mA
O_{C / W}
TJ
-50 to +125
O_C
TJ,TSTG
-50 to +150
O_C
NOTES:
Both Bonding and Chip structure are available.
STAD-FEB.21.2005
PAGE . 1