SB820CT_05 Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – SCHOTTKY BARRIER RECTIFIERS

DATA SHEET
SB820CT~SB8150CT
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE 20 to 150 Volts CURRENT
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-
S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• Both normal and Pb free product are available :
Normal : 80~95% Sn, 5~20% Pb
Pb free: 99% Sn above
MECHANICAL DATA
Case: TO-220AB full molded plastic package
Terminals: Lead solderable per MIL-STD-202G, Method 208
Polarity: As marked.
Mounting Position: Any
Weight: 0.08 ounces, 2.24grams.
8 Amperes
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
.038(0.96)
.019(0.50)
.1(2.54)
.1(2.54)
AC
Positive CT
AC
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.025(0.65)MAX
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
Maximum Recurrent Peak Reverse Voltage
SYMBOL SB820CT SB830CT SB840CT SB850CT SB860CT SB880CT SB8100CT SB8150CT UNITS
V RRM
20
30
40
50
60
80
100
150
V
Maximum RMS Voltage
V RMS
14
21
28
35
42
56
70
105
V
Maximum DC Blocking Voltage
VDC
20
30
40
Maximum Average Forward Current .375"(9.5mm)
lead length at Tc =100^OC
IAV
Peak Forward Surge Current :8.3ms single half sine-
wave superimposed on rated load(JEDEC method)
IF S M
Maximum Forward Voltage at 4.0A
VF
0.55
Maxi mum D C Reverse C urrent TA =25^OC
at Rated D C B locki ng Voltage TA =100^OC
IR
Typi cal Thermal Resi stance
RθJC
50
60
8
150
0.75
0.5
50
6
80
100
0.85
150
V
A
A
0.92
V
mA
O_{C / W}
Op e ra ti ng Juncti o n Te mp e ra ture Ra ng
TJ
-50 to +125
O_C
S to ra g e Te mp e ra ture Ra ng
TJ,TSTG
-50 to +150
O_C
Note.
Both Bonding and Chip structure are available.
STAD-FEB.21.2005
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