SB620F_04 Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – ISOLATION SCHOTTKY BARRIER RECTIFIERS

DATA SHEET
SB620F~SB660F
ISOLATION SCHOTTKY BARRIER RECTIFIERS
VOLTAGE ^{20 to 60 Volts CURRENT 6.0 Ampers}
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• Pb free product are available : 99% Sn above can meet Rohs environment
substance directive request
MECHANICAL DATA
Case: ITO-220AC full molded plastic package
Terminals: Lead solderable per MIL-STD-202G, Method 208
Polarity: As marked.
Mounting Position: Any
Weight: 0.08 ounces, 2.24grams.
ITO-220AC
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
.071(1.8)
.055(1.4)
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.1
(2.55)
.1
(2.55)
Unit : inch (mm)
.189(4.8)
.165(4.2)
.130(3.3)
.114(2.9)
.114(2.9)
.098(2.5)
.032(.8)
MAX
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
Maximum Recurrent Peak Reverse Voltage
SYMBOL SB620F SB630F SB640F SB650F SB660F UNITS
V RRM
20
30
40
50
60
V
Maximum RMS Voltage
V RMS
14
21
28
35
42
V
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
V
Maximum Average Forward Current .375"(9.5mm)
lead length at Tc =75^OC
IAV
6.0
A
Peak Forward Surge Current :8.3ms single half sine-wave
superimposed on rated load(JEDEC method)
IF S M
75
A
Maximum Forward Voltage at 6.0A
VF
0.55
0.70
V
Maximum DC Reverse Current TC=25^OC
at Rated DC Blocking Voltage TC=100^OC
Typ i c a l The rma l Re s i s ta nc e
Op e ra ti ng J unc ti o n Te mp e ra ture Ra ng e
IR
R θJ C
R θJ A
TJ
0.2
15
6
80
-50 to +125
mA
O_{C / W}
O_C
S to ra g e Te mp e ra ture Ra ng e
TJ,TSTG
-50 to +150
O_C
NOTES:
Both Bonding and Chip structure are available.
STAD-MAY.05.2004
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