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SB4020PT_10 Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – SCHOTTKY BARRIER RECTIFIERS
SB4020PT SERIES
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE 20 to 60 Volts CURRENT 40 Amperes
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forward voltage, high current capability
• High surge capacity.
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: TO-247AD/TO-3P Molded plastic
• Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Standard packaging: Any
• Weight: 0.2245 ounces, 6.3673 grams.
0.640(16.25)
0.620(15.75)
0.142(3.60)
0.125(3.20)
0.087(2.20)
0.070(1.80)
0.126(3.20)
0.110(2.80)
0.050(1.25)
0.045(1.15)
0.225(5.70)
0.204(5.20)
0.225(5.70)
0.204(5.20)
0.199(5.05)
0.175(4.45)
0.095(2.40)
0.030(0.75)
0.017(0.45)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA ME TE R
S YM B O L S B 4 0 2 0 P T S B 4 0 3 0 P T S B 4 0 4 0 P T S B 4 0 4 5 P T S B 4 0 5 0 P T S B 4 0 6 0 P T UN ITS
Maximum Recurrent Peak Reverse Voltage
V RRM
20
30
40
45
50
60
V
Maximum RMS Voltage
V
14
21
28
31.5
35
42
V
RMS
Maximum DC Blocking Voltage
Maximum Average Forward Current at
T c =90 OC
Peak Forward Surge Current : 8.3ms single
half sine-wave superimposed on rated load
(JEDEC method)
VDC
I
F (AV )
IF S M
Maximum Forward Voltage at 20A per leg
VF
Maximum DC Reverse Current at
Rated DC Blocking Voltage
TJ=2 5 OC
TJ= 1 0 0 OC
IR
Typ i ca l The rma l Re si sta nce
Op e ra ti ng J unc ti o n a nd S to ra g e Te m p e ra ture
Range
RJC
TJ,TSTG
20
30
40
40
50
60
40
350
0.55
-55 to +125
0.70
0.2
50
1.5
-55 to +150
V
A
A
V
mA
OC /
W
OC
NOTE:
Both Bonding and Chip structure are available.
August 31,2010-REV.03
PAGE . 1