SB4020PT Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – ISOLATION SCHOTTKY BARRIER RECTIFIERS

DATA SHEET
SB4020PT~SB4060PT
ISOLATION SCHOTTKY BARRIER RECTIFIERS
VOLTAGE 20 to 60 Volts CURRENT 40 Amperes
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• Both normal and Pb free product are available :
Normal : 80~95% Sn, 5~20% Pb
Pb free: 99% Sn above can meet Rohs environment substance directive request
MECHANCAL DATA
Case: TO-3P Molded plastic
Terminals: Solder plated, solderable per MIL-STD-202G, Method 208
Polarity: As marked.
Standard packaging: Any
Weight: 0.2 ounces, 5.6grams.
TO-3P
.142(3.6)
.125(3.2)
.640(16.25)
.620(15.75)
.126(3.2)
.110(2.8)
.050(1.25)
.045(1.15)
.225(5.7)
.204(5.2)
.225(5.7)
.204(5.2)
AC
Positive CT
AC
Unit: inch (mm)
.199(5.05)
.175(4.45)
.095(2.4)
.030(0.75)
.017(0.45)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
SYMBOL
SB40
20PT
SB40
30PT
SB40
35PT
SB40
40PT
SB40
45PT
SB40
50PT
SB40
60PT
UNITS
Maximum Recurrent Peak Reverse Voltage
V RRM
20
30
35
40
45
50
60
V
Maximum RMS Voltage
V RMS
14
21 24.5 28 31.5 35
42
V
Maximum DC Blocking Voltage
V DC
20
30
35
40
45
50
60
V
Maximum Average Forward Current .375”(9.5mm) lead
length a t Tc =100
IAV
40
A
Peak Forward Surge Current :8.3ms single half sine-
wave superimposed on rated load (JEDEC method)
IFSM
350
A
Maximum Forward Voltage at 20A
VF
0.55
0.70
V
Maximum DC Reverse Current TA=25
at Rated DC Blocking Voltage TA=100
IR
1.0
100
mA
Maximum Thermal Resistance
RΘJC
/W
Operating Junction and Storage Temperature Range TJ,TSTG
Note.
Both Bonding and Chip structure are available.
STAD-JAN.10.2005
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