SB3020PT_10 Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – SCHOTTKY BARRIER RECTIFIERS

SB3020PT SERIES
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE 20 to 60 Volts CURRENT 30 Amperes
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of
MIL-S-19500/228
• Low power loss, high efficiency.
• Low forward voltage, high current capability
• High surge capacity.
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: TO-3P Molded plastic
• Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Standard packaging: Any
• Weight: 0.2245 ounces, 6.3673 grams.
0.640(16.25)
0.620(15.75)
0.142(3.60)
0.125(3.20)
0.087(2.20)
0.070(1.80)
0.126(3.20)
0.110(2.80)
0.050(1.25)
0.045(1.15)
0.225(5.70)
0.204(5.20)
0.225(5.70)
0.204(5.20)
0.199(5.05)
0.175(4.45)
0.095(2.40)
0.030(0.75)
0.017(0.45)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
Maxi mum Recurrent Peak Reverse Voltage
Maxi mum RMS Voltage
S YM B OL SB 30 20P T S B30 30P T SB 3040 PT SB 304 5PT S B 3050P T SB 3060 PT UNITS
V _RRM
20
30
40
45
50
60
V
V _RMS
14
21
28
31.5
35
42
V
Maxi mum D C Blocking Voltage
V _DC
20
30
40
45
50
60
V
Ma xi mum A ve ra g e F o rwa rd C urre nt a t Tc =7 5^OC
Peak Forward Surge Current :8.3ms single
half sine-wave superi mposed on rated load
(JEDEC method)
Maxi mum Forward Voltage at 15A per leg
Maxi mum D C Reverse C urrent at Rated
DC Blocking Voltage
Typ i c a l The r ma l Re s i s ta nce
T_J= 2 5 ^OC
T_J= 1 0 0 ^OC
O p e ra ti ng J unc ti o n Te m p e ra tur e Ra ng e
S t o ra g e Te mp e ra t ure Ra ng e
I
F(AV)
I_{F SM}
V_F
I_R
R_JC
T_J
T _{S TG}
30
275
0.55
0.7
0.2
50
1.5
-55 to +125
-55 to +150
-55 to +150
A
A
V
mA
O_{C / W}
O_C
O_C
NOTE:
Both Bonding and Chip structure are available.
August 30,2010-REV.02
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