SB30100LCT Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – DUAL HIGH-VOLTAGE SCHOTTKY RECTIFIER

SB30100LCT
DUAL HIGH-VOLTAGE SCHOTTKY RECTIFIER
VOLTAGE 100 Volts CURRENT ^{30 Ampers}
FEATURES
• Low forward voltage drop, low power losses
• High efficiency operation
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case : TO-220AB, Plastic
• Terminals : Solderable per MIL-STD-750, Method 2026
• Weight: 0.0655 ounces, 1.859 grams
.058(1.47)
.042(1.07)
MAXIMUM RATINGS(TA=25^oC unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig.1)
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load per diode
Non-repetitive avalanche energy at T_J=25^oC,L=60mH per diode
Typ i c a l The rma l Re s i s ta nc e
Operating junction and storage temperature range
SYMBOL
per device
per diode
per diode
VRRM
I F(AV)
I FSM
per diode
E_{A S}
R_{θJ C}
TJ,TSTG
VALUE
100
30
15
275
300
2.5
-55 to + 150
UNIT
V
A
A
mJ
O_{C / W}
o_C
ELECTRICAL CHARACTERISTICS(TA=25^oC unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Breakdown voltage per diode
V_BR
Instantaneous forward voltage per diode ⁽¹⁾
V_F
Reverse current per diode ⁽²⁾
I_R
Note.1 Pulse test : 300µs pulse width, 1% duty cycle
2. Pulse test : Pulse widh < 40ms
I_R=1.0mA
I_F=5A
I_F=7.5A
I =15A
F
I_F=5A
I_F=7.5A
I_F=15A
V_R=70V
V_R=100V
103
120
-
V
T_A=25^oC
-
0.52
-
-
0.58
-
V
-
0.72
0.80
-
0.46
-
T_A=125^oC
-
0.53
-
V
-
0.62
0.68
-
10
-
µA
T_A=25^oC
T_A=125^oC
-
-
500
µA
32
mA
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV.0.4-JUN.26.2009
STAD-AUG.04.2009
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