SB2520CT_10 Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – SCHOTTKY BARRIER RECTIFIERS

SB2520CT SERIES
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE 20 to 60 Volts CURRENT 25 Amperes
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forward voltage, high current capability
• High surge capacity.
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• In compliance with EU RoHS 2002/95/EC directives
MECHANCEAL DATA
• Case: TO-220AB Molded plastic
• Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Standard packaging: Any
• Weight: 0.0655 ounces, 1.859 grams.
0.419(10.66)
0.387(9.85)
0.139(3.55)
MIN.
0.058(1.47)
0.042(1.07)
0.038(0.96)
0.019(0.50)
0.100(2.54)
0.100(2.54)
0.196(5.00)
0.163(4.16)
0.054(1.39)
0.045(1.15)
0 . 11 5 ( 2 . 9 2 )
0.080(2.03)
0.025(0.65)MAX.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA ME TE R
S YM B OL S B 2 5 20 C T S B 2 53 0C T S B 2 54 0C T S B 2 54 5C T S B 2 55 0 C T S B 2 5 60 C T UN ITS
Maximum Recurrent Peak Reverse Voltage
V
20
30
40
45
50
60
V
RRM
Maximum RMS Voltage
V _RMS
14
21
28
31.5
35
42
V
Maximum D C Blocking Voltage
Maximum Average Forward C urrent at
Tc =75 ^OC
Peak Forward Surge C urrent :8.3ms single
half sine-wave superimposed on rated load
(JEDEC method)
Maximum Forward Voltage at 12.5A per leg
V_DC
20
I_{F (AV )}
I_{F S M}
V_F
Maxi mum D C Reverse Current at
Rated DC Blocking Voltage
T_J=25 ^OC
T_J=1 0 0 ^OC
I_R
Typ i c a l The rma l Re s i s ta nce
R_JC
30
40
45
25.0
200
0.55
0.2
100
2
50
60
V
A
A
0.75
V
mA
O_{C / W}
O p e r a ti ng J unc ti o n Te m p e ra tur e Ra ng e
T_J
-55 to +125
-55 to +150
O_C
S to r a g e Te m p e ra tur e Ra ng e
T_STG
-55 to +150
C
NOTE:
Both Bonding and Chip structure are available.
August 25,2010-REV.03
PAGE . 1