SB2520CT_04 Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – SCHOTTKY BARRIER RECTIFIERS

DATA SHEET
SB2520CT~SB25100CT
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE 20 to 100 Volts CURRENT 25 Amperes
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• Both normal and Pb free product are available :
Normal : 80~95% Sn, 5~20% Pb
Pb free: 98.5% Sn above
MECHANCEAL DATA
Case: TO-220AB Molded plastic
Terminals: Solder plated, solderable per MIL-STD-202, Method 208
Polarity: As marked.
Standard packaging: Any
Weight: 0.08 ounces, 2.24grams.
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
.038(0.96)
.019(0.50)
.1(2.54)
.1(2.54)
AC
Positive CT
AC
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.025(0.65)MAX
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
Maximum Recurrent Peak Reverse Voltage
SYMBOL SB2520C T SB2530C T SB2540C T SB2550C T SB2560C T SB2580C T SB25100C T UNITS
V RRM
20
30
40
50
60
80
100
V
Maximum RMS Voltage
V RMS
14
21
28
35
42
56
70
V
Maximum DC Blocking Voltage
VDC
20
Maximum Average Forward Current .375"(9.5mm)
lead length at Tc =90 ^OC
IAV
Peak Forward Surge Current :8.3ms single half sine-
wave superimposed on rated load(JEDEC method)
IF S M
Maximum Forward Voltage at 12.5A, per leg
VF
Maximum DC Reverse Current TA=25 ^OC
at Rated DC Blocking Voltage TA=100^OC
IR
Typi cal Thermal Resi stance
RθJC
30
40
0.55
50
60
25.0
200
0.75
0.5
100
2
Op e ra ti ng Juncti o n Te mp e ra ture Ra ng e
TJ
-50 TO +125
80
100
V
A
A
0.85
V
mA
O_{C /}
W
O_C
S to ra g e Te mp e ra ture Ra ng e
TSTG
-50 TO +150
O_C
NOTES:
Both Bonding and Chip structure are available.
STAD-JUL.01.2004
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