SB1620FCT Datasheet, PDF (1/2 Pages) Won-Top Electronics – 16A ISOLATION SCHOTTKY BARRIER RECTIFIER

DATA SHEET
SB1620FCT~SB16150FCT
ISOLATION SCHOTTKY BARRIER RECTIFIERS
VOLTAGE ^{20 to 150 Volts} CURRENT 16 Amperes
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• Pb free product are available : 99% Sn above can meet Rohs environment
substance directive request
MECHANICAL DATA
Case: ITO-220AB molded plastic package
Terminals: Lead solderable per MIL-STD-202G, Method 208
Polarity: As marked.
Mounting Position: Any
Weight: 0.08 ounces, 2.24 grams.
ITO-220AB
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
.055(1.4)
.039(1.0)
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.1
(2.55)
.1
(2.55)
AC
Positive CT
AC
Unit : inch (mm)
.189(4.8)
.165(4.2)
.130(3.3)
.114(2.9)
.114(2.9)
.098(2.5)
.032(.8)
MAX
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PARAMETER
S YM B O L
SB1620
FCT
SB1630
FCT
SB1640
FCT
SB1650
FCT
SB1660
FCT
SB1680
FCT
SB16100
FCT
SB1650
FCT
UNITS
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80
100
150
V
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
V
Maximum DC Blocking Voltage
VDC
20
30
40
Maximum Average Forward Current .375"(9.5mm)
lead length at Tc = 90^OC
IAV
Peak Forward Surge Current :8.3ms single half sine-wave
superimposed on rated load(JEDEC method)
IFSM
Maximum Forward Voltage at 8.0A per leg
VF
0.55
Maximum DC Reverse Current at TA=25^OC
Rated DC Blocking Voltag TA=100^OC
IR
Typical Thermal Resistance
RθJC
50
60
16
150
0.75
0.5
100
2.0
80
100
0.85
150
V
A
A
0.92
V
mA
O_{C / W}
Operating Junction and Storage Temperature Range
TJ,TSTG
-50 to +125
O_C
NOTES:
Both Bonding and Chip structure are available.
REV.0-MAR.19.2005
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