SB1020_10 Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – SCHOTTKY BARRIER RECTIFIERS

SB1020 SERIES
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE 20 to 60 Volts CURRENT 10 Amperes
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltage, high current capability
• High surge capacity.
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: TO-220AC Molded plastic
• Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Standard packaging: Any
• Weight: 0.0655 ounces, 1.859 grams.
0.419(10.66)
0.387(9.85)
0.139(3.55)
MIN.
0.058(1.47)
0.042(1.07)
0.038(0.96)
0.019(0.50)
0.100(2.54)
0.100(2.54)
0.196(5.00)
0.163(4.16)
0.054(1.39)
0.045(1.15)
0 . 11 5 ( 2 . 9 2 )
0.080(2.03)
0.025(0.65)MAX.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA M E TE R
S YMB OL S B 1020 S B 1030 S B 1040 S B 1045 S B 1050 S B 1060 UNITS
Maxi mum Recurrent P eak Reverse Voltage
V
20
30
40
45
50
60
V
RRM
Maxi mum RMS Voltage
V _RMS
14
21
28
31.5
35
42
V
Maxi mum DC Blocking Voltage
Maxi mum Average Forward Current at
T =75^OC
C
Peak Forward Surge C urrent :8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maxi mum Forward Voltage at 10A
V _DC
20
I_F(AV)
I_{F S M}
V_F
Maxi mum DC Reverse Current at Rated
DC Blocking Voltage
T_J= 2 5 ^OC
T_J= 1 0 0 ^OC
I_R
Typ i c a l The rma l Re s i s ta nce
R_JC
30
40
45
10
150
0.55
0.2
50
3.0
50
60
V
A
A
0.75
V
mA
O_{C / W}
Op e r a ti ng J unc ti o n Te mp e r a tur e Ra ng e
TJ
-55 to +125
-55 to +150
O_C
S to r a g e Te m p e r a tur e Ra ng e
T S TG
-55 to +150
O_C
NOTE:
Both Bonding and Chip structure are available.
August 23,2010-REV.03
PAGE . 1