SB1020CT_10 Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – SCHOTTKY BARRIER RECTIFIERS

SB1020CT~SB1060CT
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE 20 to 60 Volts CURRENT 10 Amperes
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forward voltage, high current capability
• High surge capacity.
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• In compliance with EU RoHS 2002/95/EC directives
MECHANCAL DATA
• Case: TO-220AB Molded plastic
• Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Standard packaging: Any
• Weight: 0.0655 ounces, 1.859 grams.
0.419(10.66)
0.387(9.85)
0.139(3.55)
MIN.
0.058(1.47)
0.042(1.07)
0.038(0.96)
0.019(0.50)
0.100(2.54)
0.100(2.54)
0.196(5.00)
0.163(4.16)
0.054(1.39)
0.045(1.15)
0 . 11 5 ( 2 . 9 2 )
0.080(2.03)
0.025(0.65)MAX.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA ME TE R
S YM B OL S B 102 0C T S B 1030 C T S B 10 40C T S B 104 5C T S B 1 050C T S B 10 60C T UNITS
Maximum Recurrent P eak Reverse Voltage
V _RRM
20
30
40
45
50
60
V
Maximum RMS Voltage
V _RMS
14
21
28
31.5
35
42
V
Maximum DC Blocking Voltage
V _DC
20
Maximum A verage Forward C urrent
.375" (9 .5mm) lead length at T_C=75^OC
Peak Forward Surge Current : 8.3ms single
half si ne-wave superi mposed on rated load
(JEDEC method)
I_{F ( AV )}
I_{F SM}
Maximum Forward Voltage at 5A per leg
V
F
Maximum D C Reverse C urrent at
Rated DC Blocking Voltage
T_A= 2 5 ^OC
T_A= 1 0 0 ^OC
I_R
Typ i ca l The rma l Re si s ta nce
Op e r a ti ng J unc ti o n a nd S to ra g e Te m p e ra tur e
Range
R_JC
TJ,TSTG
30
40
45
10
150
0.55
0.2
50
3.0
-50 to +125
50
60
V
A
A
0.75
V
mA
O_{C / W}
O_C
NOTE:
Both Bonding and Chip structure are available.
September 2,2010-REV.04
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