PJZ20N50 Datasheet, PDF (1/7 Pages) Pan Jit International Inc. – 500V N-Channel MOSFET

PPJZ20N50
500V N-Channel MOSFET
Voltage
500 V Current
Features
 R_DS(ON), V_GS@10V,I_D@10A<0.3 Ω
 100% avalanche tested
 Improved dv/dt capability
 Low Gate Charge
 Comply with EU RoHS 2011/65/EU only
20 A
TO-3PN
Mechanical Data
 Case: TO-3PN Package
 Terminals : Solderable per MIL-STD-750,Method 2026
 Apporx. Weight : 0.182 ounces, 5.174 grams
 Marking : Z20N50
Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ^{(Note 1)}
Single Pulse Avalanche Energy ^{(Note 2)}
Repetitive Avalanche Current ^{(Note 1)}
Repetitive Avalanche Energy ^{(Note 1)}
Power Dissipation
T_C=25^oC
Derate above 25^oC
Peak Diode Recovery dv/dt ^{(Note 3)}
Operating Junction and Storage Temperature Range
Thermal resistance
- Junction to Case
- Junction to Ambient
 Limited only By Maximum Junction Temperature
SYMBOL
V_DS
V_GS
I_D
I_DM
E_AS
I_AR
E_AR
P_D
dv/dt
T_J,T_STG
R_θJC
R_θJA
LIMIT
500
+30
20
80
1088
20
31.2
312
2.5
4.5
-55~150
0.4
62.5
UNITS
V
V
A
V
mJ
A
W
W
W/ ^oC
V/ns
o_C
o_C/W
May 16,2013-REV.00
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