PJX8872B Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 60V N-Channel Enhancement Mode MOSFET

PPJX8872B
60V N-Channel Enhancement Mode MOSFET
Voltage
60 V
Current 200mA
Features
 RDS(ON) , VGS@10V, ID@600mA<3Ω
 RDS(ON) , VGS@4.5V, ID@200mA<4Ω
 Advanced Trench Process Technology
 Specially Designed for Relay driver, Speed line drive, etc.
 Lead free in compliance with EU RoHS 2011/65/EU directive.
 Green molding compound as per IEC61249 Std. (Halogen Free)
SOT-563
Mechanical Data
 Case: SOT-563 Package
 Terminals: Solderable per MIL-STD-750, Method 2026
 Approx. Weight: 0.00009 ounces, 0.0026 grams
 Marking: X2B
Unit : inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(T_A=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
T_A=25^oC
Derate above 25^oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient ^{(Note 3)}
SYMBOL
V_DS
V_GS
I_D
I_DM
P_D
T_J,T_STG
R_θJA
LIMIT
60
+30
200
800
300
4
-55~150
417
UNITS
V
V
mA
mA
mW
mW/ ^oC
o_C
o_C/W
June 12,2015-REV.00
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