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PJX8812 Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 30V N-Channel Enhancement Mode MOSFET– ESD Protected | |||
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PPJX8812
30V N-Channel Enhancement Mode MOSFETâ ESD Protected
Voltage
30 V Current 350mA
SOT-563
Features
ï¬ RDS(ON) , VGS@4.5V, ID@350mA<1.2â¦
ï¬ RDS(ON) , VGS@2.5V, ID@200mA<1.6â¦
ï¬ RDS(ON) , VGS@1.8V, ID@80mA<2.3â¦
ï¬ RDS(ON) , VGS@1.5V, ID@10mA<2.5â¦(typ.)
ï¬ Advanced Trench Process Technology
ï¬ ESD Protected 2KV HBM
ï¬ Specially Designed for Relay driver, Speed line drive, etc.
ï¬ Lead free in compliance with EU RoHS 2011/65/EU
directive
ï¬ Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
ï¬ Case: SOT-563 Package
ï¬ Terminals: Solderable per MIL-STD-750, Method 2026
ï¬ Approx. Weight: 0.00009 ounces, 0.0026 grams
ï¬ Marking: X12
Unit : inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
Power Dissipation
TA=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
30
+10
350
1400
300
2.4
-55~150
417
UNITS
V
V
mA
mA
mW
mW/ oC
oC
oC/W
September 30,2015-REV.00
Page 1
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