PJW4P06A Datasheet, PDF (1/8 Pages) Pan Jit International Inc. – 60V P-Channel Enhancement Mode MOSFET

PPJW4P06A
60V P-Channel Enhancement Mode MOSFET
Voltage
-60 V Current
-4.0 A
SOT-223
Features
 R_DS(ON), V_GS@-10V,I_D@-4.0A<110mΩ
1
 R_DS(ON), V_GS@-4.5V,I_D@-2.0 A<130mΩ
 High switching speed
 Improved dv/dt capability
 Low Gate Charge
 Low reverse transfer capacitance
 Lead free in compliance with EU RoHS 2011/65/EU directive.
 Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
 Case : SOT-223 Package
 Terminals : Solderable per MIL-STD-750, Method 2026
 Approx. Weight : 0.043 ounces, 0.123 grams
 Marking: W4P06A
Maximum
Ratings
and
Thermal
Characteristics
o
(T_A=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
T_A=25^oC
T_A=70^oC
Pulsed Drain Current ^{(Note 1)}
Power Dissipation
T_A=25^oC
T_A=70^oC
Single Pulse Avalanche Energy ^{(Note 5)}
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient ^{(Note 6)}
SYMBOL
V_DS
V_GS
I_D
I_DM
P_D
E_AS
T_J,T_STG
R_θJA
 Limited only By Maximum Junction Temperature
LIMIT
-60
+20
-4
-3.2
-16
3.1
2
12.8
-55~150
40.3
UNITS
V
V
A
A
W
mJ
o_C
o_C/W
July 7,2015-REV.00
Page 1