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| PJW4N10 Datasheet, PDF (1/8 Pages) Pan Jit International Inc. – 100V N-Channel Enhancement Mode MOSFET | |||
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PPJW4N10
100V N-Channel Enhancement Mode MOSFET
Voltage
100 V Current
4A
SOT-223
Features
ï¬ RDS(ON), VGS@10V,ID@2A<258mΩ
1
ï¬ RDS(ON), VGS@6V,ID@1A<268mΩ
ï¬ Low On-Resistance
ï¬ Low input capacitance
ï¬ Lead free in compliance with EU RoHS 2011/65/EU directive
ï¬ Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
ï¬ Case : SOT-223 Package
ï¬ Terminals : Solderable per MIL-STD-750, Method 2026
ï¬ Approx. Weight : 0.043 ounces, 0.123 grams
ï¬ Marking: W4N10
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(Note 1)
Power Dissipation
Continuous Drain Current
Power Dissipation
Power Dissipation
TC=25oC
TC=100oC
TC=25oC
TC=25oC
TC=100oC
TA=25oC
TA=70oC
TA=25oC
TA=70oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance(Note 4,5)
Junction to Case
Junction to Ambient
ï¬ Limited only By Maximum Junction Temperature
SYMBOL
VDS
VGS
ID
IDM
PD
ID
PD
TJ,TSTG
RθJC
RθJA
LIMIT
100
+20
4
2.5
8
8
3.2
2.5
2
3.1
2
-55~150
15.6
40.3
UNITS
V
V
A
W
A
A
W
oC
oC/W
July 7,2015-REV.00
Page 1
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