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PJW4N06A Datasheet, PDF (1/8 Pages) Pan Jit International Inc. – 60V N-Channel Enhancement Mode MOSFET | |||
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PPJW4N06A
60V N-Channel Enhancement Mode MOSFET
Voltage
60 V
Current
4.0 A
SOT-223
Features
ï¬ RDS(ON), VGS@10V,ID@3.0A<100mΩ
1
ï¬ RDS(ON), VGS@4.5V,ID@2.0A<110mΩ
ï¬ Advanced Trench Process Technology
ï¬ High density cell design for ultra low on-resistance
ï¬ Lead free in compliance with EU RoHS 2011/65/EU directive.
ï¬ Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
ï¬ Case : SOT-223 Package
ï¬ Terminals : Solderable per MIL-STD-750, Method 2026
ï¬ Approx. Weight : 0.043 ounces, 0.123 grams
ï¬ Marking: W4N06A
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
Power Dissipation
TA=25oC
TA=70oC
TA=25oC
TA=70oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 5)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
ï¬ Limited only By Maximum Junction Temperature
LIMIT
60
+20
4
3.2
8
3.1
2
-55~150
40.3
UNITS
V
V
A
A
W
oC
oC/W
July 7,2015-REV.00
Page 1
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