PJW3N10A Datasheet, PDF (1/8 Pages) Pan Jit International Inc. – 100V N-Channel Enhancement Mode MOSFET

PPJW3N10A
100V N-Channel Enhancement Mode MOSFET
Voltage
100 V Current
2.2 A
SOT-223
Features
 R_DS(ON), V_GS@10V,I_D@2.2A<310mΩ
1
 R_DS(ON), V_GS@4.5V,I_D@1A<320mΩ
 Low On-Resistance
 Low input capacitance
 Lead free in compliance with EU RoHS 2011/65/EU
directive
 Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
 Case : SOT-223 Package
 Terminals : Solderable per MIL-STD-750, Method 2026
 Approx. Weight : 0.043 ounces, 0.123 grams
 Marking: W3N10A
Maximum
Ratings
and
Thermal
Characteristics
o
(T_A=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ^{(Note 1)}
Power Dissipation
T_A=25^oC
T_A=70^oC
T_A=25^oC
T_A=70^oC
SYMBOL
V_DS
V_GS
I_D
I_DM
P_D
Operating Junction and Storage Temperature Range T_J,T_STG
Typical Thermal resistance
- Junction to Ambient, t≦10s ^{(Note 5)}
R_θJA
LIMIT
100
+20
2.2
1.7
4.4
3.1
2.0
-55~150
40.3
 Limited only By Maximum Junction Temperature
UNITS
V
V
A
A
W
o_C
o_C/W
July 7,2015-REV.00
Page 1