PJW1NA80 Datasheet, PDF (1/8 Pages) Pan Jit International Inc. – 800V N-Channel MOSFET

PPJW1NA80 / PJU1NA80 / PJD1NA80 / PJP1NA80
800V N-Channel MOSFET
Voltage
800 V Current
1A
Features
 R_DS(ON), V_GS@10V,I_D@0.5A<16Ω
 High switching speed
 Improved dv/dt capability
 Low Gate Charge
 Low reverse transfer capacitance
 Lead free in compliance with EU RoHS 2011/65/EU directive.
 Green molding compound as per IEC61249 Std.
(Halogen Free)
TO-220AB
SOT-223
TO-252
TO-251AB
Mechanical Data
 Case : TO-251AB ,TO-220AB, SOT-223, TO-252 Package
 Terminals : Solderable per MIL-STD-750, Method 2026
 TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams
 TO-220AB Approx. Weight : 0.067 ounces, 1.89 grams
 SOT-223 Approx. Weight : 0.043 ounces, 0.123grams
 TO-252 Approx. Weight : 0.0104 ounces, 0.297grams
Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
I_D
Pulsed Drain Current
I_DM
Single Pulse Avalanche Energy ^{(Note 1)}
E_AS
Power Dissipation
T_C=25^oC
Derate above 25^oC
P_D
Operating Junction and
Storage Temperature Range
T_J,T_STG
Typical Thermal resistance
- Junction to Case
- Junction to Ambient
R_θJC
R_θJA
TO-251AB
34
0.27
3.68
110
TO-220AB
TO-252
800
+30
1
4
23
45
34
0.36
0.27
-55~150
2.78
3.68
62.5
110
 Limited only By Maximum Junction Temperature
SOT-223
0.3
1.2
3.3
0.026
UNITS
V
V
A
A
mJ
W
W/ ^oC
o_C
-
37.9 ^{(Note 4)}
o_C/W
March 10,2014-REV.00
Page 1