PJU50N10L Datasheet, PDF (1/8 Pages) Pan Jit International Inc. – 100V N-Channel Enhancement Mode MOSFET

PPJU50N10L / PJD50N10L
100V N-Channel Enhancement Mode MOSFET
Voltage
100 V Current
50 A
Features
 R_DS(ON), V_GS@10V,I_D@30A<22mΩ
 High switching speed
 Improved dv/dt capability
 Low reverse transfer capacitance
 Lead free in compliance with EU RoHS 2011/65/EU directive.
 Green molding compound as per IEC61249 Std.
(Halogen Free)
TO-252
TO-251AB
Mechanical Data
 Case : TO-251AB, TO-252 Package
 Terminals : Solderable per MIL-STD-750, Method 2026
 TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams
 TO-252 Approx. Weight : 0.0104 ounces, 0.297grams
Maximum
Ratings
and
Thermal
Characteristics
o
(T_A=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
T_C=25^oC
T_C=100^oC
Pulsed Drain Current
T_C=25^oC
Power Dissipation
T_C=25^oC
T_C=100^oC
Continuous Drain Current
T_A=25^oC
T_A=70^oC
Power Dissipation
T_A=25^oC
Power Dissipation
T_A=70^oC
Single Pulse Avalanche Energy ^{(Note 1)}
Operating Junction and Storage Temperature Range
Typical Thermal Resistance
Junction to Case
Junction to Ambient
 Limited only By Maximum Junction Temperature
SYMBOL
V_DS
V_GS
I_D
I_DM
PD
I_D
PD
E_AS
T_J,T_STG
R_θJC
R_θJA
LIMIT
100
+20
50
32
100
96
38
8
6.5
2.5
1.6
80
-55~150
1.3
50 ^{(Note 1)}
UNITS
V
V
A
W
A
A
W
mJ
o_C
o_C/W
April 9,2015-REV.00
Page 1