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PJU45N06A Datasheet, PDF (1/8 Pages) Pan Jit International Inc. – 60V N-Channel Enhancement Mode MOSFET | |||
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PPJU45N06A / PJD45N06A
60V N-Channel Enhancement Mode MOSFET
Voltage
60 V
Current
45 A
Features
ï¬ RDS(ON), VGS@10V,ID@30A<12mΩ
ï¬ RDS(ON), VGS@4.5V,ID@15A<15mΩ
ï¬ High switching speed
ï¬ Improved dv/dt capability
ï¬ Low reverse transfer capacitance
ï¬ Lead free in compliance with EU RoHS 2011/65/EU
directive.
ï¬ Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
TO-252
TO-251AB
ï¬ Case : TO-251AB , TO-252 Package
ï¬ Terminals : Solderable per MIL-STD-750, Method 2026
ï¬ TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams
ï¬ TO-252 Approx. Weight : 0.0104 ounces, 0.297grams
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC=25oC
TC=100oC
Pulsed Drain Current
TC=25oC
Power Dissipation
TC=25oC
TC=100oC
Continuous Drain Current
TA=25oC
TA=70oC
Power Dissipation
TA=25oC
Power Dissipation
TA=70oC
Single Pulse Avalanche Energy (Note 1)
Operating Junction and Storage Temperature Range
Typical Thermal resistance
Junction to Case
Junction to Ambient
ï¬ Limited only By Maximum Junction Temperature
SYMBOL
VDS
VGS
ID
IDM
PD
ID
PD
EAS
TJ,TSTG
RθJC
RθJA
LIMIT
60
+20
45
29
180
63
25
9.5
7.6
2.5
1.6
61
-55~150
2.0
50
UNITS
V
V
A
W
A
A
W
mJ
oC
oC/W
February 11,2015-REV.00
Page 1
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