PJU3NA80 Datasheet, PDF (1/8 Pages) Pan Jit International Inc. – 800V N-Channel MOSFET

PPJU3NA80 / PJD3NA80 / PJP3NA80 / PJF3NA80
800V N-Channel MOSFET
Voltage
800 V Current
3A
Features
 R_DS(ON), V_GS@10V,I_D@1.5A<4.8Ω
 High switching speed
 Improved dv/dt capability
 Low Gate Charge
 Low reverse transfer capacitance
 Lead free in compliance with EU RoHS 2011/65/EU directive.
 Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
 Case : TO-251AB,TO-252 ,TO-220AB, ITO-220AB-F Package
 Terminals : Solderable per MIL-STD-750, Method 2026
 TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams
 TO-252 Approx. Weight : 0.0104 ounces, 0.297grams
 TO-220AB Approx. Weight : 0.067 ounces, 2 grams
 ITO-220AB-F Approx. Weight : 0.068 ounces, 2 grams
ITO-220AB-F
TO-220AB
TO-252
TO-251AB
Maximum
Ratings
and
Thermal
Characteristics
o
(T_A=25 C
unless
otherwise
noted)
PARAMETER
SYMBOL TO-251AB TO-220AB ITO-220AB-F TO-252 UNITS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche Energy ^{(Note 1)}
Power Dissipation
T_C=25^oC
Derate above 25^oC
Operating Junction and
Storage Temperature Range
Typical Thermal resistance
- Junction to Case
- Junction to Ambient
V_DS
V_GS
I_D
I_DM
E_AS
P_D
T_J,T_STG
R_θJC
R_θJA
80
0.64
1.56
110
800
+30
3
12
173
106
39
0.85
0.31
-55~150
80
0.64
V
V
A
A
mJ
W
W/ ^oC
o_C
1.2
62.5
3.2
1.56 ^oC/W
120
110
 Limited only By Maximum Junction Temperature
March 10,2014-REV.00
Page 1