PJU3NA50 Datasheet, PDF (1/7 Pages) Pan Jit International Inc. – 500V N-Channel MOSFET

PPJU3NA50 / PJD3NA50
500V N-Channel MOSFET
Voltage
500 V Current
3A
Features
 R_DS(ON), V_GS@10V,I_D@1.5A<3.2Ω
 High switching speed
 Improved dv/dt capability
 Low Gate Charge
 Low reverse transfer capacitance
 Lead free in compliance with EU RoHS 2011/65/EU directive.
 Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
 Case : TO-251AB , TO-252 Package
 Terminals : Solderable per MIL-STD-750, Method 2026
 TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams
 TO-252 Approx. Weight : 0.0104 ounces, 0.297grams
TO-252
TO-251AB
Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
I_D
Pulsed Drain Current
I_DM
Single Pulse Avalanche Energy ^{(Note 1)}
E_AS
Power Dissipation
T_C=25^oC
Derate above 25^oC
P_D
Operating Junction and
Storage Temperature Range
T_J,T_STG
Typical Thermal resistance
- Junction to Case
- Junction to Ambient
R_θJC
R_θJA
 Limited only By Maximum Junction Temperature
TO-251AB
500
+30
3
12
120
34
0.27
-55~150
TO-252
34
0.27
3.68
3.68
110
110
UNITS
V
V
A
A
mJ
W
W/ ^oC
o_C
o_C/W
March 10,2014-REV.00
Page 1