PJU2NA90 Datasheet, PDF (1/8 Pages) Pan Jit International Inc. – 900V N-Channel MOSFET

PPJU2NA90 / PJP2NA90 / PJF2NA90 / PJD2NA90
900V N-Channel MOSFET
Voltage
900 V Current
2A
Features
 R_DS(ON), V_GS@10V,I_D@1A<6.4Ω
 High switching speed
 Improved dv/dt capability
 Low Gate Charge
 Low reverse transfer capacitance
 Lead free in compliance with EU RoHS 2011/65/EU directive.
 Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
ITO-220AB-F
TO-220AB
 Case : TO-251AB ,TO-220AB, ITO-220AB-F, TO-252 Package
 Terminals : Solderable per MIL-STD-750, Method 2026
 TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams
 TO-220AB Approx. Weight : 0.0667 ounces, 1.89 grams
 ITO-220AB-F Approx. Weight : 0.068 ounces, 2 grams
 TO-252 Approx. Weight : 0.0104 ounces, 0.297grams
Maximum
Ratings
and
Thermal
Characteristics
o
(T_A=25 C
unless
otherwise
noted)
PARAMETER
SYMBOL TO-251AB TO-220AB ITO-220AB-F TO-252 UNITS
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
I_D
Pulsed Drain Current
I_DM
Single Pulse Avalanche Energy ^{(Note 1)}
E_AS
T_C=25^oC
50
Power Dissipation
Derate above 25^oC
P_D
0.4
Operating Junction and
Storage Temperature Range
T_J,T_STG
900
+30
2
8
148
80
39
0.64
0.31
-55~150
V
V
A
A
mJ
50
W
0.4
W/ ^oC
o_C
Typical Thermal resistance
- Junction to Case
- Junction to Ambient
R_θJC
R_θJA
2.5
110
1.56
62.5
3.21
120
2.5
o_C/W
110
 Limited only By Maximum Junction Temperature
April 24,2015-REV.00
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