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PJU2NA1K Datasheet, PDF (1/8 Pages) Pan Jit International Inc. – 900V N-Channel MOSFET | |||
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PPJU2NA1K / PJD2NA1K / PJP2NA1K / PJF2NA1K
900V N-Channel MOSFET
Voltage 1000 V Current
2A
Features
ï¬ RDS(ON), VGS@10V,ID@1A<9Ω
ï¬ High switching speed
ï¬ Improved dv/dt capability
ï¬ Low Gate Charge
ï¬ Low reverse transfer capacitance
ï¬ Lead free in compliance with EU RoHS 2011/65/EU directive.
ï¬ Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
ITO-220AB-F
TO-220AB
TO-252
TO-251AB
ï¬ Case : TO-251AB,TO-252 ,TO-220AB, ITO-220AB-F Package
ï¬ Terminals : Solderable per MIL-STD-750, Method 2026
ï¬ TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams
ï¬ TO-252 Approx. Weight : 0.0104 ounces, 0.297grams
ï¬ TO-220AB Approx. Weight : 0.0667 ounces, 1.89 grams
ï¬ ITO-220AB-F Approx. Weight : 0.068 ounces, 2 grams
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
SYMBOL TO-251AB TO-220AB ITO-220AB-F TO-252 UNITS
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
IDM
Single Pulse Avalanche Energy (Note 1)
EAS
TC=25oC
50
Power Dissipation
Derate above 25oC
PD
0.4
Operating Junction and
Storage Temperature Range
TJ,TSTG
Typical Thermal resistance
- Junction to Case
- Junction to Ambient
RθJC
2.5
RθJA
110
1000
+30
2
8
148
80
39
0.64
0.31
-55~150
V
V
A
A
mJ
50
W
0.4
W/ oC
oC
1.56
3.21
2.5
oC/W
62.5
120
110
ï¬ Limited only By Maximum Junction Temperature
August 3,2015-REV.00
Page 1
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