PJU1N60 Datasheet, PDF (1/5 Pages) Pan Jit International Inc. – 600V N-Channel Enhancement Mode MOSFET

PJU1N60
600V N-Channel Enhancement Mode MOSFET
FEATURES
• 1A, 600V, R_DS(ON)=11Ω@V_GS=10V, I_D=0.5A
TO-251
• Low ON Resistance
• Fast Switching
• Low Gate Charge
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charge and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
TO -2 5 1
G
1
D
2
S
3
MECHANICAL DATA
• Case: TO-220AB / TO-251 Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
INTERNAL SCHEMATIC DIAGRAM
2 Drain
ORDERING INFORMATION
TYPE
MARKING
PJU1N60
U1N60
PACKAGE
TO-251
PACKING
80PCS/TUBE
1
Gate
3 Source
Maximum RATINGS and Thermal Characteristics (T_A=25^OC unless otherwise noted )
PA RA ME TE R
S ym b o l
Drain-Source Voltage
V _DS
Gate-Source Voltage
V _GS
Continuous Drain Current
I_D
Pulsed Drain Current ¹⁾
Maximum Power Dissipation
Derating Factor
I_DM
T_A= 2 5 ^OC
P_D
Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e
Avalanche Energy with Single Pulse
I_AS=1.1A, VDD=50V, L=95mH
Junction-to-Case Thermal Resistance
T_J,T_STG
E _AS
R_θJC
Junction-to Ambient Thermal Resistance
R_θJA
Note : 1. Maximum DC current limited by the package
PJU1N60
600
+30
1
4.6
28
0.22
-55 to +150
58
4.5
100
Uni ts
V
V
A
A
W
O_C
mJ
O_{C /W}
O_{C /W}
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
April 12,2010-REV.00
PAGE . 1