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PJU14P06 Datasheet, PDF (1/8 Pages) Pan Jit International Inc. – 60V P-Channel Enhancement Mode MOSFET | |||
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PPJU14P06 / PJD14P06
60V P-Channel Enhancement Mode MOSFET
Voltage
-60 V Current
-14 A
Features
ï¬ RDS(ON), VGS@-10V,ID@-7A<115mΩ
ï¬ RDS(ON), VGS@-4.5V,ID@-3.5A<160mΩ
ï¬ High switching speed
ï¬ Improved dv/dt capability
ï¬ Low Gate Charge
ï¬ Low reverse transfer capacitance
ï¬ Lead free in compliance with EU RoHS 2011/65/EU directive.
ï¬ Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
ï¬ Case: TO-251AB, TO-252 Package
ï¬ Terminals : Solderable per MIL-STD-750, Method 2026
ï¬ TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams
ï¬ TO-252 Approx. Weight : 0.0104 ounces, 0.297grams
TO-252
TO-251AB
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current
Single Pulse Avalanche Energy (Note 2)
Power Dissipation
TC=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Case
- Junction to Ambient (Note 1)
VDS
VGS
ID
IDM
EAS
PD
TJ,TSTG
RθJC
RθJA
ï¬ Limited only By Maximum Junction Temperature
LIMIT
-60
+20
-14
-32
42
45
0.3
-55~175
3.33
62.5
UNITS
V
V
A
A
mJ
W
W/ oC
oC
oC/W
June 11,2015-REV.01
Page 1
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