PJT7839 Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 60V P-Channel Enhancement Mode MOSFET

PPJT7839
60V P-Channel Enhancement Mode MOSFET
Voltage
-60 V Current -250mA
Features
 RDS(ON) , VGS@-10V, ID@-500mA<4Ω
 RDS(ON) , VGS@-4.5V, ID@-200mA<6Ω
 RDS(ON) , VGS@-2.5V, ID@-50mA<13Ω
 Advanced Trench Process Technology
 Specially Designed for Relay driver, Speed line drive, etc.
 Lead free in compliance with EU RoHS 2011/65/EU directive.
 Green molding compound as per IEC61249 Std. (Halogen Free)
Mechanical Data
 Case: SOT-363 Package
 Terminals : Solderable per MIL-STD-750, Method 2026
 Approx. Weight: 0.0002 ounces, 0.006 grams
 Marking: T39
SOT-363
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(T_A=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
T_A=25^oC
Derate above 25^oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient ^{(Note 3)}
SYMBOL
V_DS
V_GS
I_D
I_DM
P_D
T_J,T_STG
R_θJA
LIMIT
-60
+20
-250
-1000
350
2.8
-55~150
357
UNITS
V
V
mA
mA
mW
mW/ ^oC
o_C
o_C/W
July 22,2015-REV.00
Page 1