PJT7838 Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 50V N-Channel Enhancement Mode MOSFET

PPJT7838
50V N-Channel Enhancement Mode MOSFET
Voltage
50 V
Current 400mA
Features
 RDS(ON) , VGS@10V, ID@500mA<1.45Ω
 RDS(ON) , VGS@4.5V, ID@200mA<1.95Ω
 RDS(ON) , VGS@2.5V, ID@100mA<4.0Ω
 RDS(ON) , VGS@1.8V, ID@10mA<4.0Ω(typ.)
 Advanced Trench Process Technology
 ESD Protected 2KV HBM
 Specially Designed for Relay driver, Speed line drive, etc.
 Lead free in compliance with EU RoHS 2011/65/EU directive
 Green molding compound as per IEC61249 Std. (Halogen Free)
Mechanical Data
 Case : SOT-363 Package
 Terminals : Solderable per MIL-STD-750, Method 2026
 Approx. Weight : 0.0002 ounces, 0.006 grams
 Marking: T38
SOT-363
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(T_A=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
T_A=25^oC
Derate above 25^oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient ^{(Note 3)}
SYMBOL
V_DS
V_GS
I_D
I_DM
P_D
T_J,T_STG
R_θJA
LIMIT
50
+20
400
1200
350
2.8
-55~150
357
UNITS
V
V
mA
mA
mW
mW/ ^oC
o_C
o_C/W
June 17,2015-REV.00
Page 1