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PJT7808 Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 20V N-Channel Enhancement Mode MOSFET | |||
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PPJT7808
20V N-Channel Enhancement Mode MOSFET
Voltage
20 V Current 500mA
Features
ï¬ Low Voltage Drive (1.2V).
ï¬ Advanced Trench Process Technology
ï¬ Specially Designed for Switch Load, PWM Application, etc.
ï¬ ESD Protected
ï¬ Lead free in compliance with EU RoHS 2011/65/EU
directive.
ï¬ Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
ï¬ Case: SOT-363 Package
ï¬ Terminals : Solderable per MIL-STD-750, Method 2026
ï¬ Approx. Weight: 0.0002 ounces, 0.006 grams
ï¬ Marking: T08
SOT-363
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 4)
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
20
+10
500
1000
350
2.8
-55~150
357
UNITS
V
V
mA
mA
mW
mW/ oC
oC
oC/W
March 6,2015-REV.00
Page 1
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