PJT7807 Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 20V P-Channel Enhancement Mode MOSFET

PPJT7807
20V P-Channel Enhancement Mode MOSFET
Voltage
-20 V Current -500mA
Features
 Low Voltage Drive (1.2V).
 Advanced Trench Process Technology
 Specially Designed for Load switch, PWM Application, etc.
 ESD Protected
 Lead free in compliance with EU RoHS 2011/65/EU
directive.
 Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
 Case: SOT-363 Package
 Terminals: Solderable per MIL-STD-750, Method 2026
 Approx. Weight: 0.0002 ounces, 0.006 grams
 Marking: T07
SOT-363
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(T_A=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ^{(Note 4)}
Power Dissipation
T_a=25^oC
Derate above 25^oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient ^{(Note 3)}
SYMBOL
V_DS
V_GS
I_D
I_DM
P_D
T_J,T_STG
R_θJA
LIMIT
-20
+10
-500
-1000
350
2.8
-55~150
357
UNITS
V
V
mA
mA
mW
mW/ ^oC
o_C
o_C/W
March 6,2015-REV.00
Page 1