PJT7802 Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 20V N-Channel Enhancement Mode MOSFET – ESD Protected

PPJT7802
20V N-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
20 V
Current
0.5A
SOT-363
Features
 RDS(ON) , VGS@4.5V, ID@0.5A<0.4Ω
 RDS(ON) , VGS@2.5V, ID@0.3A<0.7Ω
 RDS(ON) , VGS@1.8V, ID@0.1A<1.2Ω(typ.)
 Advanced Trench Process Technology
 Specially Designed for Switch Load, PWM Application, etc.
 ESD Protected
 Lead free in compliance with EU RoHS 2011/65/EU directive.
 Green molding compound as per IEC61249 Std.(Halogen Free)
Mechanical Data
 Case : SOT-363 Package
 Terminals : Solderable per MIL-STD-750, Method 2026
 Approx. Weight : 0.0002 ounces, 0.006 grams
 Marking : T02
Unit: inch(mm)
Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ^{(Note 4)}
Power Dissipation
T_a=25^oC
Derate above 25^oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient ^{(Note 3)}
SYMBOL
V_DS
V_GS
I_D
I_DM
P_D
T_J,T_STG
R_θJA
LIMIT
20
+12
0.5
2.0
350
2.8
-55~150
357
UNITS
V
V
A
A
mW
mW/ ^oC
o_C
o_C/W
September 10,2014-REV.01
Page 1