PJT7800 Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 20V N-Channel Enhancement Mode MOSFET – ESD Protected

PPJT7800
20V N-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
20 V
Current
1A
SOT-363
Features
 RDS(ON) , VGS@4.5V, ID@1.0A<150mΩ
 RDS(ON) , VGS@2.5V, ID@0.7A<215mΩ
 RDS(ON) , VGS@1.8V, ID@0.3A<400mΩ
 Advanced Trench Process Technology
 Specially Designed for Switch Load, PWM Application, etc.
 ESD Protected
 Lead free in comply with EU RoHS 2011/65/EU directives.
 Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
 Case : SOT-363 Package
 Terminals : Solderable per MIL-STD-750, Method 2026
 Approx. Weight : 0.0002 ounces, 0.006 grams
 Marking : T00
Unit: inch(mm)
Fig.161
(TOP VIEW)
Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ^{(Note 4)}
Power Dissipation
T_a=25^oC
Derate above 25^oC
Operating Junction and Storage Temperature Range
Thermal resistance
- Junction to Ambient ^{(Note 3)}
SYMBOL
V_DS
V_GS
I_D
I_DM
P_D
T_J,T_STG
R_θJA
LIMIT
20
+8
1
4
350
2.8
-55~150
357
UNITS
V
V
A
A
mW
mW/ ^oC
o_C
o_C/W
July 10,2013-REV.00
Page 1