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PJT7603 Datasheet, PDF (1/9 Pages) Pan Jit International Inc. – Complementary Enhancement Mode MOSFET – ESD Protected | |||
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PPJT7603
Complementary Enhancement Mode MOSFET â ESD Protected
Voltage 50 / -60V Current
0.4A / -0.25A SOT-363
Features
ï¬ Advanced Trench Process Technology
ï¬ Specially Designed for Switch Load, PWM Application, etc.
ï¬ ESD Protected 2KV HBM
ï¬ Lead free in compliance with EU RoHS 2011/65/EU
directive
ï¬ Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
ï¬ Case: SOT-363 Package
ï¬ Terminals: Solderable per MIL-STD-750, Method 2026
ï¬ Approx. Weight: 0.0002 ounces, 0.006 grams
ï¬ Marking: T63
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 4)
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL N-Ch LIMIT P-Ch LIMIT
VDS
VGS
ID
IDM
PD
TJ,TSTG
50
-60
+20
+20
400
-250
1200
-900
350
2.8
-55~150
RθJA
357
UNITS
V
V
mA
mA
mW
mW/ oC
oC
oC/W
September 18,2015-REV.00
Page 1
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