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PJT138K_14 Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 50V N-Channel Enhancement Mode MOSFET – ESD Protected | |||
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PPJT138K
50V N-Channel Enhancement Mode MOSFET â ESD Protected
Voltage
50 V
Current 360mA
SOT-363
Features
ï¬ RDS(ON) , VGS@10V, ID@500mA<1.6â¦
ï¬ RDS(ON) , VGS@4.5V, ID@200mA<2.5â¦
ï¬ RDS(ON) , VGS@2.5V, ID@100mA<4.5â¦
ï¬ Advanced Trench Process Technology
ï¬ Specially Designed for Battery Operated Systems, Solid-State
Relays Drivers: Relay, Displays, Memories, etc.
ï¬ ESD Protected 2KV HBM
ï¬ Lead free in compliance with EU RoHS 2011/65/EU directive
ï¬ Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
ï¬ Case: SOT-363 Package
ï¬ Terminals : Solderable per MIL-STD-750, Method 2026
ï¬ Approx. Weight: 0.00021 ounces, 0.006 grams
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
TA=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
50
+20
360
1200
236
1.89
-55~150
530
UNITS
V
V
mA
mA
mW
mW/ oC
oC
oC/W
November 13,2014-REV.02
Page 1
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