PJT138K Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 50V N-Channel Enhancement Mode MOSFET – ESD Protected

PPJT138K
50V N-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
50 V
Current
350mA
SOT-363
Features
 RDS(ON) , VGS@10V, ID@500mA<1.6Ω
 RDS(ON) , VGS@4.5V, ID@200mA<2.5Ω
 RDS(ON) , VGS@2.5V, ID@100mA<4.5Ω
 Advanced Trench Process Technology
 Specially Designed for Battery Operated Systems, Solid-
State Relays Drivers: Relay, Displays, Memories, etc.
 ESD Protected
 Lead free in comply with EU RoHS 2011/65/EU directives.
 Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
 Case: SOT-363 Package
 Terminals : Solderable per MIL-STD-750, Method 2026
 Approx. Weight: 0.00021 ounces, 0.006 grams
Unit: inch(mm)
Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
T_a=25^oC
Derate above 25^oC
Operating Junction and Storage Temperature Range
Thermal resistance
- Junction to Ambient ^{(Note 3)}
SYMBOL
V_DS
V_GS
I_D
I_DM
P_D
T_J,T_STG
R_θJA
LIMIT
50
+20
350
1200
223
1.8
-55~150
560
UNITS
V
V
mA
mA
mW
mW/ ^oC
o_C
o_C/W
March 25,2013-REV.00
Page 1