PJSD12LCFN2 Datasheet, PDF (1/5 Pages) Pan Jit International Inc. – BI-DIRECTIONAL ESD PROTECTION DIODE

PJSD12LCFN2
BI-DIRECTIONAL ESD PROTECTION DIODE
This bi-directional TVS has been designed to protect sensitive equipment against ESD and to prevent
Latch-Up events in CMOS circuitry operating at 12Vdc and below.This offers an integrated solution to
protect a single data line where the board space is a premium.
SPECIFICATION FEATURES
• 115W Power Dissipation (8/20s Waveform)
• Low Leakage Current, Maximum of 0.1A@12Vdc
• Very low Clamping voltage
• IEC 61000-4-2 ESD +30kV air, +30kV Contact Compliance
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.042(1.05)
0.037(0.95)
MECHANICAL DATA
• Terminals : Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.00004 ounces ,0.001 grams
• Case : DFN 2L, Plastic
• Marking : BX
0.013(0.32)
0.008(0.22)
0.002(0.05)MAX.
APPLICATIONS
• Video I/O ports protection
• Set Top Boxes
• Portable Instrumentation
PIN NO.1
IDENTIF ICATION
MAXIMUM RATINGS (TA=25^oC unless otherwise noted)
RATING
Peak Pulse Power (8/20 s Waveform)
Peak Pulse Current (8/20 s Waveform)
ESD Voltage per IEC61000-4-2 (Contact)
ESD Voltage per IEC61000-4-2 (Air)
ESD Voltage (HBM)
Op e ra ti ng J unc ti o n a nd S to rag e Te mp e ra ture Ra ng e
SYMBOL
PPP
I PPM
VESD
VESD
VESD
TJ,TSTG
VALUE
115
5
+ 30
+ 30
+8
-55 to +150
UNITS
W
A
kV
kV
kV
O_C
May 21,2012-REV.00
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