PJSD05ULFN2 Datasheet, PDF (1/3 Pages) Pan Jit International Inc. – SINGLE LINE LOW CAPACITANCE TVS DIODE FOR ESD PROTECTION IN PORTABLE ELECTRONICS

PJSD05ULFN2
SINGLE LINE LOW CAPACITANCE TVSDIODE FOR ESD PROTECTION IN PORTABLE ELECTRONICS
VOLTAGE
5 Volts
POWER
200 Watts DFN 2L
Unit : inch(mm)
FEATURES
• 200 Watts peak pules power( tp=8/20 s)
• Small package for use in portable electronics
• Suitable replacement for MLV’S in ESD protection applications
• Low clamping voltage and leakage current
• In compliance with EU RoHS 2002/95/EC directives
• Case: DFN 2L plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : BU
MAX.
APPLICATIONS
• Instrumentation
• Portable electronics
• Mobile phone and accessories
32
0.008(0.22)
PIN NO.1
IDENTIFICATION
MAXIMUM RATINGS AND ELECTRICAL CHATACTERISTICS
ABSOLUTE MAXIMUM RATING
Rating
Peak Pulse Power (tp=8/20 s)
Max Peak Pulse Current 8/20s
ESD Voltage
Operating Junction and Storage Temperature Range
ELECTRICAL CHARA CTERISTICS
Symbol
P_PK
I _PPM
V_ESD
T_J,T_STG
Value
200
18
25
-55 to +150
Units
W
A
KV
O_C
Parameter
Symbol
Conditions
Min.
Reverse Stand-Off Voltage
V_RWM
-
-
Reverse Breakdown Voltage
V_BR
I _BR=1mA
6.0
Reverse Leakage Current
I_R
V_R=5V
-
Clamping Voltage(8/20 s)
V_C
I _PP=5A
-
Clamping Voltage(8/20 s)
Off State Junction
Capacitance
V_C
I _PP=15A
-
C_J
0Vdc Bias=f=1MHz
-
Typ.
-
7.4
-
9.0
11.5
0.28
Max.
5
-
1
11
14
0.35
Units
V
V
A
V
V
pF
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV.0.5-AUG.11.2009
PAGE . 1