PJSD05LCTM-AU Datasheet, PDF (1/5 Pages) Pan Jit International Inc. – BI-DIRECTIONAL ESD PROTECTION DIODE

PJSD05LCTM-AU
BI-DIRECTIONAL ESD PROTECTION DIODE
This Penta has been designed to Protect Sensitive Equipment against ESD and to prevent Latch-Up
events in CMOS circuitry operating at 5Vdc and below.This offers an integrated solution to protect up to
data line where the board space is a premium.
SPECIFICATION FEATURES
• 25W Power Dippsipation (8/20s Waveform)
• Low Leakage Current, Maximum of 1 A@5Vdc
• Very low Clamping voltage
• IEC 61000-4-2 ESD 15kV air, 8kV Contact Compliance
• Lead free in comply with EU RoHS 2011/65/EU directives
• Green molding compound as per IEC61249 Std. . (Halogen Free)
• Acqire quality system certificate : TS16949
• AEC-Q101 qualified
APPLICATIONS
• Video I/O ports protection
• Set Top Boxes
• Portable Instrumentation
MECHANICAL DATA
• Case : SOD-923, Plastic
• Terminals : Solderable per MIL-STD-750, Method 2026
• Approx. Weight : 0.0004gram
• Marking : X
MAXIMUM RATINGS
Rating
Peak Pulse Power (8/20 s Waveform)
Peak Pulse Current (8/20 s Waveform)
ESD Voltage (HBM)
O p e ra t i ng J unc t i o n a nd S t o r a g e Te mp e r a t ur e Ra ng e
Symbol
PPP
I PP
V_ESD
TJ,TSTG
ELECTRICAL CHARACTERISTICS (TA=25^oC)
Parameter
Symbol
Conditions
Min.
Reverse Stand-Off Voltage
VWRM
-
Reverse Breakdown Voltage
VBR
I BR=1mA
5.78
Reverse Leakage Current
IR
VR=5V
-
Clamping Voltage (8/20s)
VC
I PP =2A
-
Off State Junction Capacitance
CJ
0 Vdc Bias f=1MHz
-
February 2,2013-REV.03
Value
25
2
>25
-55 to +150
Units
W
A
kV
O_C
Typ.
Max.
Units
-
5.0
V
-
7.82
V
-
1.0
A
-
12.5
V
-
15
pF
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