PJSD05LCFN2 Datasheet, PDF (1/3 Pages) Pan Jit International Inc. – BI-DIRECTIONAL ESD PROTECTION DIODE

PJSD05LCFN2
BI-DIRECTIONAL ESD PROTECTION DIODE
This bi-directional TVS has been designed to protect sensitive equipment against ESD and to prevent
Latch-Up events in CMOS circuitry operating at 5Vdc and below.This offers an integrated solution to
protect a single data line where the board space is a premium.
SPECIFICATION FEATURES
• 40W Power Dippsipation (8/20s Waveform)
• Low Leakage Current, Maximum of 1 A@5Vdc
• Very low Clamping voltage
• IEC 61000-4-2 ESD 15kV air, 8kV Contact Compliance
• In compliance with EU RoHS 2002/95/EC directivess
• Terminals : Solderable per MIL-STD-750, Method 2026
• Case : DFN 2L, Plastic
• Marking : BY
DFN 2L
Unit : inch(mm)
MAX.
APPLICATIONS
• Video I/O ports protection
• Set Top Boxes
• Portable Instrumentation
32
0.008(0.22)
PIN NO.1
IDENTIFICATION
MAXIMUM RATINGS
Rating
Peak Pulse Power (8/20 s Waveform)
Peak Pulse Current (8/20 s Waveform)
ESD Voltage (HBM)
Op e ra t i ng J unc t i o n a nd S to r a g e Te mp e r a tur e Ra ng e
Symbol
PPP
I PPM
VESD
TJ,TSTG
Value
40
4
>25
-55 to +150
Units
W
A
kV
O_C
ELECTRICAL CHARACTERISTICS (TA=25^oC)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Units
Reverse Stand-Off Voltage
VWRM
-
-
5.0
V
Reverse Breakdown Voltage
VBR
I BR=1mA
5.78
-
7.82
V
Reverse Leakage Current
IR
VR=5V
-
-
1.0
A
Clamping Voltage (8/20s)
VC
I PP =4A
-
-
10
V
Off State Junction Capacitance
CJ
0 Vdc Bias f=1MHz
-
-
15
pF
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV.0.5-AUG.11.2009
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