PJSD05CTS Datasheet, PDF (1/3 Pages) Pan Jit International Inc. – BI-DIRECTIONAL ESD PROTECTION DIODE

PJSD05CTS
BI-DIRECTIONAL ESD PROTECTION DIODE
This Penta has been designed to Protect Sensitive Equipment against ESD and to prevent Latch-Up
events in CMOS circuitry operating at 5Vdc and below.This offers an integrated solution to protect up to
data line where the board space is a premium.
SPECIFICATION FEATURES
• 100W Power Dippsipation (8/20µs Waveform)
• Low Leakage Current,Maximum of 0.5µA@5Vdc
• Very low Clamping voltage
• IEC 61000-4-2 ESD 15kV air, 8kV Contact Compliance
• In compliance with EU RoHS 2002/95/EC directivess
APPLICATIONS
• Video I/O ports protection
• Set Top Boxes
• Portable Instrumentation
• Case : SOD-523 plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
• Approx Weight : 0.0014 grams
• Marking : RS
1
2
Fig.130
MAXIMUM RATINGS
Rating
Peak Pulse Power (8/20 µs Waveform)
Peak Pulse Current (8/20 µs Waveform)
ESD Voltage (HBM)
Op e ra ti ng J unc ti o n a nd S to ra g e Te m p e ra ture Ra ng e
Symbol
PPP
I PP
V_ESD
TJ,TSTG
ELECTRICAL CHARACTERISTICS (TA=25^oC)
Parameter
Symbol
Conditions
Min.
Reverse Stand-Off Voltage
VWRM
-
Reverse Breakdown Voltage
VBR
I BR=1mA
5.78
Reverse Leakage Current
IR
VR=3.5V
-
Clamping Voltage (8/20µs)
VC
I PP=1A
-
Clamping Voltage (8/20µs)
VC
I PP=4A
-
Off State Junction Capacitance
CJ
0 Vdc Bias f=1MHz
-
Off State Junction Capacitance
CJ
5 Vdc Bias f=1MHz
-
REV.0.4-FEB.25.2009
Value
100
5.0
>25
-55 to 150
Units
W
A
kV
O_C
Typ.
Max.
Units
-
5.0
V
-
7.82
V
-
0.5
µA
-
12
V
-
15
V
-
30
pF
-
25
pF
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