PJSD03TS_15 Datasheet, PDF (1/7 Pages) Pan Jit International Inc. – SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS

PJSD03TS~PJSD36TS
SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS
VOLTAGE 3~36 Volt
POWER
120 Watt
FEATURES
• 120 Watts peak pules power( tp=8/20μs)
• Small package for use in portable electronics
• Suitable replacement for MLV’S in ESD protection applications
• Low clamping voltage and leakage current
• Lead free in compliance with EU RoHS 2011/65/EU directive
0.034(0.85)
0.029(0.75)
0.050(1.25)
0.045(1.15)
0.014(0.35)
0.009(0.25)
APPLICATIONS
• Case: SOD-523 plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
• Approx Weight: 0.00005 ounces, 0.0014 grams
• Marking : PJSD03TS : KD
PJSD05TS : KE
PJSD07TS : KF
PJSD08TS : KR
PJSD12TS : LE
1
Cathode
PJSD15TS : LM
PJSD24TS : LZ
PJSD36TS : MP
2
Anode
0.067(1.70)
0.059(1.50)
0.006(0.15)
0.002(0.05)
0.20 MIN.
0.026(0.65)
0.021(0.55)
MAXIMUM RATINGS AND ELECTRICAL CHATACTERISTICS
ABSOLUTE MAXIMUM RATING
Rating
Peak Pulse Power Dissipation (tp=8/20 μs)
ESD Voltage
Operating Temperature
Storage Temperature
Symbol
P_PP
V
ESD
T_J
T
STG
Value
120
25
-50 to +150
-50 to +150
Units
W
KV
O_C
O_C
ELECTRICAL CHATACTERISTICS
PJSD03TS
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20μs)
Off State Junction Capacitance
Off State Junction Capacitance
Symbol
V_RWM
V_BR
I_R
Conditions
-
I _BR=1mA
V_R=3.3V
Min.
-
4
-
V_C
I _PP=5A
-
C_J
0Vdc Bias=f=1MHz
-
C_J
3.3Vdc Bias=f=1MHz
-
Typical
-
-
-
-
-
-
Max.
3.3
-
200
6.5
200
100
Units
V
V
μA
V
pF
pF
August 11,2015-REV.01
PAGE . 1