PJSD03LCFN2 Datasheet, PDF (1/3 Pages) Pan Jit International Inc. – BI-DIRECTIONAL ESD PROTECTION DIODE

PJSD03LCFN2
BI-DIRECTIONAL ESD PROTECTION DIODE
This bi-directional TVS has been designed to protect sensitive equipment against ESD and to prevent Latch-Up
events in CMOS circuitry operating at 3.3Vdc and below.This offers an integrated solution to protect a single data
line where the board space is a premium.
SPECIFICATION FEATURES
• 40W Power Dissipation (8/20μs Waveform)
• Low Leakage Current, Maximum of 2.5μA@3.3Vdc
• Very low Clamping voltage
• IEC 61000-4-2 ESD 30kV air, 30kV Contact Compliance
• In compliance with EU RoHS 2002/95/EC directives
• Terminals : Solderable per MIL-STD-750, Method 2026
• Case : DFN 2L, Plastic
• Marking : BS
APPLICATIONS
• Video I/O ports protection
• Set Top Boxes
• Portable Instrumentation
0.042(1.05)
0.037(0.95)
0.013(0.32)
0.008(0.22)
0.002(0.05)MAX.
PIN NO.1
IDENTIFICATION
MAXIMUM RATINGS
Rating
Peak Pulse Power (8/20 μs Waveform)
Peak Pulse Current (8/20 μs Waveform)
O p e ra t i ng J unc t i o n a nd S t o ra g e Te m p e r a tur e Ra ng e
Symbol
PPP
I PPM
TJ,TSTG
Value
40
6
-55 to +150
Units
W
A
O_C
ELECTRICAL CHARACTERISTICS (T_J=25^oC)
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (8/20μs)
Off State Junction Capacitance
Symbol
Conditions
VWRM
VBR
I BR=1mA
IR
VR=3.3V
VC
I PP=6A
CJ
0 Vdc Bias f=1MHz
Min.
Typ.
Max.
Units
-
-
3.3
V
5.4
-
7.0
V
-
-
2.5
μA
-
-
10
V
-
-
25
pF
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
January 05,2011-REV.00
PAGE . 1