PJS6833 Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 30V P-Channel Enhancement Mode MOSFET – ESD Protected

PPJS6833
30V P-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
-30 V Current
-1.1A
SOT-23 6L
Features
 RDS(ON) , VGS@-4,5V, ID@-1.1A<370mΩ
 RDS(ON) , VGS@-2.5V, ID@-0.5A<540mΩ
 RDS(ON) , VGS@-1.8V, ID@-0.1A<970mΩ
 Advanced Trench Process Technology
 Specially Designed for Switch Load, PWM Application, etc.
 ESD Protected 2KV HBM
 Lead free in compliance with EU RoHS 2011/65/EU directive.
 Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
 Case: SOT-23 6L Package
 Terminals : Solderable per MIL-STD-750, Method 2026
 Approx. Weight: 0.0005 ounces, 0.0141 grams
 Marking: SG3
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(T_A=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ^{(Note 4)}
Power Dissipation
T_a=25^oC
Derate above 25^oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient ^{(Note 3)}
SYMBOL
V_DS
V_GS
I_D
I_DM
P_D
T_J,T_STG
R_θJA
LIMIT
-30
+8
-1.1
-4.4
1.25
10
-55~150
100
UNITS
V
V
A
A
W
mW/ ^oC
o_C
o_C/W
January 22,2015-REV.01
Page 1